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DG3000
Vishay Siliconix
Low-Voltage Single SPDT MICRO FOOTtAnalog Switch
FEATURES
D MICRO FOOT Chip Scale Package (1.07 x 1.57 mm) D Low Voltage Operation (1.8 V to 5.5 V) D Low On-Resistance - rDS(on): 1.4 W D Fast Switching - tON : 24 ns, tOFF: 9 ns D Low Power Consumption D TTL/CMOS Compatible
BENEFITS
D D D D Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space
APPLICATIONS
D D D D D D Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems PCM Cards PDA
DESCRIPTION
The DG3000 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 24 ns, tOFF: 9 ns), low on-resistance (rDS(on): 1.4 W) and small physical size (MICRO FOOT, 6-bump), the DG3000 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG3000 is built on Vishay Siliconix's low voltage JI2 process. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG3000.
Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
MICRO FOOT (6-Bump)
TRUTH TABLE
IN V+ GND
B1 A1
NO (Source1) COM NC (Source2)
Logic
0 1
NC
ON OFF
NO
OFF ON
B2
A2
B3
A3
Top View A1 Locator 3000
ORDERING INFORMATION Temp Range
-40 to 85C
Package
MICRO FOOT: 6-Bump (2 x 3, 0.5-mm Pitch)
Part Number
DG3000DB
Device Marking: 3000 xxx = Date/Lot Traceability Code
XXX
Document Number: 71742 S-21483--Rev. C, 26-Aug-02
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DG3000
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150C Package Reflow Conditionsb VPR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215C IR/Convection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220C Power Dissipation (Packages)c 6-Bump, 2 x 3 MICRO FOOTd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Notes: a Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b Refer to IPC/JEDEC (J-STD-020A). No hand/manual solder rework recommended c All bumps soldered to PC Board. d Derate 6.5 mW/_C above 25_C
SPECIFICATIONS (V+ = 2.0 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatnessd VNO, VNC, VCOM rON rON Flatness INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) V+ = 1.8 V, VCOM = 1.0 V, INO, INC = 10 mA V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA Full Room Fulld Room Room Fulld Room Fulld Room Fulld -700 -1 1 -700 -1 1 -700 -1 1 0 17 V+ 20 22.5 W 14 700 11 700 11 700 11 pA nA pA nA pA nA V
Limits
-40 to 85_C
Symbol
V+ = 2.0 V, "10%, VIN = 0.4 or 1.6 Ve
Tempa
Minb
Typc
Maxb
Unit
Switch Off Leakage Currentf
V+ = 2.2 V VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V
V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V
Digital Control
Input High Voltage Input Low Voltage Input Capacitanced Input Currentd
VINH
Full Full Full VIN = 0 or V+ Full
1.6 0.4 5 -1 1 V pF mA
VINL
Cin
IINL or IINH
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced tON tOFF td QINJ OIRR XTALK CNO(off), CNC(off) CON CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W CL = 5 pF, f = 1 MHz W, VNO or VNC = 1.5 V, RL = 300 W, CL = 35 pF W Figures 1 and 2 Room Fulld Room Fulld Room Room Room Room Room VIN = 0 or V+, f = 1 MHz Room 98 1 61 17 45 2 -61 -67 31 pF dB pC 76 79 33 36 ns
Power Supply
Power Supply Range Power Supply Currentd Power Consumption V+ I+ PC VIN = 0 or V+ 1.8 0.1 2.2 1.0 2.2 V mA mW
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Document Number: 71742 S-21483--Rev. C, 26-Aug-02
DG3000
Vishay Siliconix
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistanced rON Flatnessd VNO, VNC, VCOM rON rON Flatness INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA Full Room Full Room Room Full Room Full Room Full -800 -13 -800 -13 -800 -13 0 3.3 3.4 1.3 800 13 800 13 800 13 pA nA pA nA pA nA V+ 4.1 4.2 V
Limits
-40 to 85_C
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
Tempa
Minb
Typc
Maxb
Unit
W
Switch Off Leakage Current f
V+ = 3.3 V VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
Digital Control
Input High Voltage Input Low Voltage Input Capacitanced Input Currentd
VINH
Full Full Full VIN = 0 or V+ Full
2 0.4 5 -1 1 V pF mA
VINL
Cin
IINL or IINH
Dynamic Characteristics
Turn-On Timed Turn-Off Timed Break-Before-Make Timed Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Capacitanced tON tOFF td QINJ OIRR XTALK CNO(off), CNC(off) CON CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W CL = 5 pF, f = 1 MHz W, VNO or VNC = 2.0 V, RL = 300 W, CL = 35 pF W Figure 1 and 2 Room Full Room Full Room Room Room Room Room VIN = 0 or V+, f = 1 MHz Room 47 1 34 12 23 4 -61 -67 31 pF dB pC 49 52 30 33 ns
Power Supply
Power Supply Range Power Supply Currentd Power Consumption V+ I+ PC VIN = 0 or V+ 2.7 0.1 3.3 1.0 3.3 V mA mW
Document Number: 71742 S-21483--Rev. C, 26-Aug-02
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DG3000
Vishay Siliconix
SPECIFICATIONS (V+ = 5.0 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatnessd VNO, VNC, VCOM rON rON Flatness INO(off), INC(off) Switch Off Leakage Current ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA Full Room Full Room Room Full Room Full Room Full -1.2 -21 -1.2 -21 -1.2 -21 0 1.4 1.6 0.5 1.2 21 1.2 21 1.2 21 nA V+ 2.3 2.8 V
Limits
-40 to 85_C
Symbol
V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve
Tempa
Minb
Typc
Maxb
Unit
W
V+ = 5.5 V VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V V+ = 5.5 V, V+ = 5.5 V VNO, VNC = VCOM = 1 V/4.5 V
Digital Control
Input High Voltage Input Low Voltage Input Capacitance Input Current
VINH
Full Full Full VIN = 0 or V+ Full
2.4 0.8 5 -1 1 V pF mA
VINL
Cin
IINL or IINH
Dynamic Characteristics
Turn-On Timed Turn-Off Timed Break-Before-Make Timed Charge Injectiond Off-Isolationd Crosstalkd Source-Off Capacitanced Channel-On Capacitanced tON tOFF td QINJ OIRR XTALK CNO(off), CNC(off) CON CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W CL = 5 pF, f = 1 MHz W, VNO or VNC = 3 V, RL = 300 W, CL = 35 pF W Figure 1 and 2 Room Full Room Full Room Room Room Room Room VIN = 0 or V+, f = 1 MHz Room 96 1 24 9 15 38 -61 -67 30 pF dB pC 36 39 22 25 ns
Power Supply
Power Supply Range Power Supply Current Power Consumption Notes: a. b. c. d. e. f. Room = 25C, Full = as determined by the operating suffix. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Typical values are for design aid only, not guaranteed nor subject to production testing. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. V+ I+ PC VIN = 0 or V+ 4.5 0.1 5.5 1.0 5.5 V mA mW
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Document Number: 71742 S-21483--Rev. C, 26-Aug-02
DG3000
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Supply Voltage
20
r ON - On-Resistance ( W )
16 V+ = 1.8 V 12
8 V+ = 2 V 4 V+ = 3 V
V+ = 5 V
0 0 1 2 3 4 5
VCOM - Analog Voltage (V)
rON vs. Analog Voltage and Temperature
14 12 r ON - On-Resistance ( W ) 10 8 V+ = 2 V 6 4 2 0 0 1 2 3 4 5 85_C 25_C -40 _C V+ = 5 V 85_C 25_C -40 _C r ON - On-Resistance ( W ) 4 5
rON vs. Analog Voltage and Temperature
V+ = 3 V
25_C 85_C 3
2
-40 _C
1
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
Supply Current vs. Temperature
10 V+ = 5 V VIN = 0 V I+ - Supply Current (nA) 10 m 1m I+ - Supply Current (A)
Supply Current vs. Input Switching Frequency
1
100 m 10 m 1m
0.1
100 n
0.01 -60
10 n -40 -20 0 20 40 60 80 100 10 100 1K 10 K 100 K 1M 10 M Temperature (_C) Input Switching Frequency (Hz)
Document Number: 71742 S-21483--Rev. C, 26-Aug-02
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DG3000
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Leakage Current vs. Temperature
10000 V+ = 5.5 V 0 1000 Leakage Current (pA) INO(off)/INC(off) 100 Leakage Current (pA) -200 -400 -600 -800 -1000 1 -60 -1200 -40 -20 0 20 40 60 80 100 0 1 2 3 4 5 Temperature (_C) VCOM, VNO, VNC - Analog Voltage ICOM(off) INO(off)/INC(off) ICOM(on) 200 V+ = 5 V T = 25_C
Leakage vs. Analog Voltage
ICOM(off) ICOM(on)
10
Switching Time vs. Temperature and Supply Voltage
70 t ON, t OFF - Switching Time (ns) 60 50 40 30 20 10 0 -60 tON V+ = 3 V tON V+ = 5 V tOFF V+ = 2 V tOFF V+ = 3 V tOFF V+ = 5 V tON V+ = 2 V Loss, OIRR, XTALK (dB)
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
10 0 -10 -20 -30 -40 -50 -60 -70 XTALK -80 -90 OIRR V+ = 3 V RL = 50 W LOSS
-40
-20
0
20
40
60
80
100
100 K
1M
10 M Frequency (Hz)
100 M
1G
Temperature (_C)
Switching Threshold vs. Supply Voltage
2.0 1.8 V T - Switching Threshold (V) Q - Charge Injection (pC) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 V+ - Supply Voltage (V) -80 0 20 40
Charge Injection vs. Analog Voltage
0 V+ = 2 V -20
V+ = 3 V
-40
V+ = 5 V
-60
1
2
3
4
5
VCOM - Analog Voltage (v)
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Document Number: 71742 S-21483--Rev. C, 26-Aug-02
DG3000
Vishay Siliconix
TEST CIRCUITS
V+ Logic Input V+ Switch Input NO or NC IN Logic Input GND RL 300 W CL 35 pF COM Switch Output VOUT 0.9 x VOUT Switch Output 0V tON tOFF VINH 50% VINL
tr t 5 ns tf t 5 ns
CL (includes fixture and stray capacitance) V OUT + V COM RL R L ) R ON
Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense.
FIGURE 1. Switching Time
V+ Logic Input COM VO RL 300 W CL 35 pF VINH VINL tr <5 ns tf <5 ns
V+ VNO VNC NO NC IN GND
VNC = VNO VO Switch Output 0V
90%
tD
tD
CL (includes fixture and stray capacitance)
FIGURE 2. Break-Before-Make Interval
V+
Rgen + Vgen
V+ COM IN GND NC or NO VOUT VOUT CL = 1 nF IN On
DVOUT
Off Q = DVOUT x CL
On
VIN = 0 - V+ IN depends on switch configuration: input polarity determined by sense of switch.
FIGURE 3. Charge Injection
Document Number: 71742 S-21483--Rev. C, 26-Aug-02
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DG3000
Vishay Siliconix
TEST CIRCUITS
V+ 10 nF
V+ NC or NO IN COM RL V COM Off Isolation + 20 log V NO NC 0V, 2.4 V
GND
Analyzer
FIGURE 4. Off-Isolation
V+ 10 nF
V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz
FIGURE 5. Channel Off/On Capacitance
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Document Number: 71742 S-21483--Rev. C, 26-Aug-02
DG3000
Vishay Siliconix
PACKAGE OUTLINE MICRO FOOT: 6-BUMP (2 X 3, 0.5-mm PITCH)
6 O 0.150 X 0.180 Note 2 Solder Mask O X 0.280 0.5 Silicon 0.5 A Recommended Land Pattern A1 Bump Note 1 Index-Bump A1 Note 3 b Diameter A2
3
2
1
XXX 3000
Top Side (Die Back)
A e B S S e D E
NOTES (Unless Otherwise Specified): 1. 2. 3. Bump is Eutectic 63/57 Sn/Pb. Non-solder mask defined copper landing pad. Laser Mark on silicon die back; no coating. Shown is not actual marking; sample only.
MILLIMETERS* Dim A A1 A2 b D E e S
0.278
INCHES Min
0.0242 0.0055 0.0187 0.0071 0.0612 0.0415
Min
0.615 0.140 0.475 0.180 1.555 1.055 0.5 BASIC
Max
0.715 0.190 0.525 0.250 1.585 1.085
Max
0.0281 0.0075 0.0207 0.0098 0.0624 0.0427
0.0197 BASIC 0.293 0.0109 0.0115
* Use millimeters as the primary measurement.
Document Number: 71742 S-21483--Rev. C, 26-Aug-02
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